Meetings

EDS'2010 : Extended defects in semiconductors


Dear friends and colleagues, a first reminder about the international conference on Extended Defects
in Semiconductors 2010 to be held at the University of Sussex 19th-24th September 2010.

The conference website is: www.eds-conferences.org/EDS2010

The remit of the conference includes extended defects, nanostructures,
nanoparticles, quantum dots and interfaces within semiconducting
materials ranging from narrow to wide band gaps, including
graphene-derived materials and diamond. There will be a session to
honour the work of Professor Bob Jones on his retirement.

Malcolm Heggie

The remit of the conference includes extended defects, nanostructures,
nanoparticles, quantum dots and interfaces within semiconducting
materials ranging from narrow to wide band gaps, including
graphene-derived materials and diamond. There will be a session to
honour the work of Professor Bob Jones on his retirement.

We would be very glad to receive short abstracts (half an A4 page to
EDS2010@sussex.ac.uk). Abstract deadline is revised to 12th June with
notification by 14th June.

Confirmed Invited Speakers are:

Professor Nigel Browning, UCDavis, USA
"High Spatial and Temporal Resolution TEM studies of Semiconductor
Systems"

Dr. Jun Chen (NIMS, Tsukuba, Japan)
"Electrical, optical and mechanical properties of GBs in mc-Si"

Dr Dariusz Chrobak (Silesia, Poland)
"Nanoindentation of semiconductors: experiment and atomistic
simulations"

Professor Nick Cowern (Newcastle, UK)
"Defects and diffusion in Ge - a comparison with Si"

Professor G. P. Dimitrakopulos (Thessaloniki, Greece)
"Interfacial sources of extended defects in nonpolar and semipolar
III-Nitride heteroepitaxy"

Professor Robert Hull (RPI, New York, USA)
"Use of controlled surface defects to engineer assembly of epitaxial
semiconductor nanostructures"

Professor Bob Jones (Exeter, UK)
"Point and Extended defects in brown and nano-crystalline diamonds"

Dr. Johann Michler (EMPA, Switzerland)
"Sample size dependent brittle-ductile transition in semiconductors in
uni-axial micro-compression experiments"

Dr. Michelle Moram (Cambridge, UK)
"Dislocation movement in the III-nitrides"

Dr. Heidi Nordmark (SINTEF, Norway)
"H-initiated extended defects from plasma treatment: comparison between
c-Si and mc-Si"

Dr. Laurent Pizzagalli (Poitiers, France)
"Core dislocations in silicon: new aspects from numerical simulations"

Professor Manfred Reiche (MPI, Halle, Germany)
"Structure and properties of dislocations in bonded interfaces"

Professor Bo Yang (FIT, Florida, USA)
"Nanoscale continuum calculation of basal dislocation core structures in
graphite"

Professor Ichiro Yonenaga (Sendai, Japan)
"The susceptibility of GaN and ZnO to dislocation formation"


With best wishes


2 June 2010