Jan Grym
| Name | Jan Grym |
| Work Groups |
Work Group 1 - Synthesis Work Group 2 - Characterisation |
| Laboratory | Semiconductor Technology |
| Organisation | Institute of Photonics and ELectronics, AS CR |
| Website | http://www.ufe.cz/staff.php?id=grym |
| Areas of Research | Lattice mismatched semiconductor structures |
| Research Keywords | III-V semiconductors, porous semiconductors, epitaxy |
| Areas of Future Interest | Characterization of nanointerfaces, modelling of strain distribution at the interface of lattice mismatched heterostructures |
Brief CV
Current research interests:
- Preparation and characterization of porous structures of III-V semiconductors.
- Rare-earth elements in the growth of III-V semiconductors.
- Preparation of high purity epitaxial layers for ionizing radiation detectors.
Education:
Czech Technical University in Prague, Faculty of Electrical Engineering:
- 2007 Ph.D. in Electrotechnology and materials; Doctoral thesis: Role of Rare-Earth Elements in Growth Process of InP Epitaxial Layers
- 2000 MSc. in Technology of electronic devices; Diploma thesis: Purification of Lead Iodide by Zone Melting
Work and research history:
- October-December 2004: two-month stay, Institute of Semiconductors, Chinese Academy of Sciences, Beijing.
- October 2003-July 2004: Marie Curie Fellowship (5th Framework Programme of EU), ten-month stay, Dept. of Physics of Materials, Faculty of Physics, Universidad Complutense de Madrid, Spain. Research training in characterisation of electronic and optical properties of semiconductors by different microscopy and spectroscopy techniques. Preparation and characterization of ZnO nanostructures.
- 2000-now: member of the research team, Institute of Photonics and Electronics, Department of Semiconductor Technology.
- 1998-1999: Semiconductors Ltd.,: measurement of power semiconductor devices.