Ivana Capan
| Name | Ivana Capan |
| Work Groups |
Work Group 2 - Characterisation |
| Laboratory | Laboratory for semiconductors |
| Organisation | Rudjer Boskovic Institute |
| Website | http://www.irb.hr/users/capan/ |
| Areas of Research | Electrical characterization of low dimensional semiconductor structures |
| Research Keywords | Silicon, Germanium, Nanocrystals, C-V, DLTS |
| Areas of Future Interest | Flash memory, Third generation solar cells - si ncs; QDs; |
Selected Publications:
- Nano Si Superlattices for the Next Generation Solar Cells
- Carrier storage in Ge nanoparticles produced by pulsed laser deposition
- Divacancy clustering in neutron-irradiated and annealed n -type germanium
- Structural and charge trapping properties of two bi-layer (Ge+SiO2)/SiO2 films deposited on rippled substrate
- Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation
Brief CV
Research Experience:
1. I-V, C-V and C-T measurements
2. Deep Level Transient Spectroscopy (DLTS), high-resolution Laplace-transform DLTS
3. Synchrotron measurements @ Elettra: Small Angle X-ray Scattering, SAXS (GISAXS)
Low dimensional semiconductor nanostructures
Si,Ge NCs