Jose Coutinho

Name Jose Coutinho
Work Groups Work Group 4 - Theory
Laboratory i3N
Organisation University of Aveiro
Areas of Research Energy and charge transfer in Si nanoparticles; Defects in group IV semiconductors
Research Keywords Silicon, Nanoparticles, Electronic structure, Density Functional Theory

Areas of Future Interest Electronic structure of hybrid Polymer/Si-Nanoparticle systems

Selected Publications:

Brief CV
Jose Coutinho,

Academic record:
2007, Auxiliary Researcher, i3N - University of Aveiro, Portugal
2005, Auxiliary Professor, University of Aveiro, Portugal
2002, Post-Doctoral Fellowship, University of Aveiro, Portugal
2001, PhD in Physics, University of Exeter, United Kingdom

Research interests:
* Electronic structure calculations of defects in group IV semiconductors;
* Electronic structure calculations of Si nanoparticles
* Electronic and optical properties of hybrid polymer/Si-Nanocrystal blends;

Publications (6 among 80):

1. First-principles study of Fe and FeAl defects in SiGe alloys, A. Carvalho, J. Coutinho, R. Jones, J. Goss, M. Barroso, and P. R. Briddon, Phys. Rev. B 78, 125208 (2008).

2. The self-interstitial in germanium, A. Carvalho, R. Jones, C. Janke, J. P. Goss, P. R. Briddon, J. Coutinho and S. Oberg, Phys. Rev. Lett. 99, 175502 (2007).

3. First-principles investigation of a bi-stable boron-oxygen interstitial pair in Si, A. Carvalho, R. Jones, M. Sanati, S.K. Estreicher, J. Coutinho, and P. R. Briddon, Phys. Rev. B. 73, 245210 (2006).

4. Donor-vacancy complexes in Ge: cluster and supercell calculations, J. Coutinho, S. Oberg, V. J. B. Torres, M. Barroso, R. Jones, and P. R. Briddon, Phys. Rev. B 73, 235213 (2006).

5. Ab-initio calculation of the local vibrational modes of the interstitial boron-oxygen defect in Si, A. Carvalho, R. Jones, J. Coutinho, P. R. Briddon, J. Phys. C: Cond. Matter 17, L155 (2005).

6. Thermal double donors and quantum dots, J. Coutinho , R. Jones, L. I. Murin, V. P. Markevich, J. L. Lindstrom, P. R. Briddon, S. Oberg, Phys. Rev. Lett 87, 235501 (2001).